Advanced e-beam reticle writing system for next-generation reticle fabrication

Tetsuji Nakahara; Kazui Mizuno; Suyo Asai; Yasuhiro Kadowaki; Katsuhiro Kawasaki; Hidetoshi Satoh

doi:10.1117/12.392095

19 July 2000 Advanced e-beam reticle writing system for next-generation reticle fabrication

Tetsuji Nakahara, Kazui Mizuno, Suyo Asai, Yasuhiro Kadowaki, Katsuhiro Kawasaki, Hidetoshi Satoh

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392095
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

In this paper, the key features and results of the new advanced electron beam reticle writing system HL-900M are shown. This new system, based on HL-800M technology, has been improved form the both sides of hardware and software with introducing some new technologies. The new electron beam optical column has been introduced to keep enough stability against environmental fluctuations. X-Y stage mechanism and high precision temperature control system have been refreshed to promise highly positioning accuracy. Parallel processing exposure function makes throughput improved even with handling the huge amount of data, such as over 20 Gbytes in the standard specification system. As some results of evaluation test, the critical dimension accuracy of 12 nm, the pattern positioning accuracy of 25 nm and the stitching accuracy of 15 nm were obtained. The total performance of this system is satisfied with the specification of the 0.18-0.15 micrometers node reticles on production levels and development of 0.13 micrometers node reticles.

Citation Download Citation

Tetsuji Nakahara, Kazui Mizuno, Suyo Asai, Yasuhiro Kadowaki, Katsuhiro Kawasaki, and Hidetoshi Satoh "Advanced e-beam reticle writing system for next-generation reticle fabrication", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392095

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