Semiconductor photonic integration: a regrowth free approach

John H. Marsh

doi:10.1117/12.392145

11 July 2000 Semiconductor photonic integration: a regrowth free approach

John H. Marsh

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392145
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

A robust impurity free quantum well intermixing process has been developed that allows complex photonic integrated circuits to be fabricated. Characteristics of the process are discussed and its attributes summarised. The use of the process in three widely differing fabricating applications is described: high-power high-brightness AlGaInP semiconductor laser diodes, nonlinear GaAs/AlGaAs waveguide devices and InGaAsP/InP crosspoint switches.

Citation Download Citation

John H. Marsh "Semiconductor photonic integration: a regrowth free approach", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392145

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