Paper
29 November 2000 Textured growth of [100] diamond on Al2O3 ceramic substrate by microwave plasma chemical vapor deposition
Zhijun Fang, Yiben Xia, Jianhua Ju, Linjun Wang, Weli Zhang
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408330
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
[100]-textured diamond thin film on a rough and randomly oriented Al2O3 substrate has been achieved by MPCVD. The cyclic technique--the cyclic modulation of the H2 plasma (etching process) and CH4+H2 plasma (growing process)--has been applied during the growth stage with various etching/growth time ratios. The dependencies of properties and morphologies of the films on the etching time interval were well explained by the selective etching of hydrogen ions to non-[100]- oriented grains. The strong effects of different methane concentrations and substrate temperatures on the [100]-textured growth were also concluded. Growth mechanisms of [100]-textured diamond thin films on Al2O3 substrates were discussed based on the detailed results of Scanning Electron Microscopy, Raman Spectrum and X-ray Diffraction Spectrum.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhijun Fang, Yiben Xia, Jianhua Ju, Linjun Wang, and Weli Zhang "Textured growth of [100] diamond on Al2O3 ceramic substrate by microwave plasma chemical vapor deposition", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408330
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Diamond

Etching

Methane

Hydrogen

Ceramics

Plasma

Microwave radiation

RELATED CONTENT


Back to Top