Paper
18 December 2000 Near-field millimeter-wave injection and its application in probing of high-frequency devices
Harold R. Fetterman, Mohammed Ershad Ali, Kandadai S. Ramesh, Talal Azfar, Dwight C. Streit, Seok K. Han, Kwang Y. Kang
Author Affiliations +
Abstract
A novel technique, that combines optical heterodyning and near-field optics, was developed for highly localized of millimeter waves in ultrafast devices. The technique relies on evanescent coupling of the interfering laser to a small are of the device, by means of a near-field fiber optic probe. The applicability of the technique was first validated by measurements on heterojunction photo transistors up to 100GHz. Later, scanned measurements at 63GHz were performed on two ultrafast device structures, namely low temperature GaAs photoconductive switches and InP-based high electron mobility transistors. The response characteristics were rich in structures that revealed important details of the device dynamics.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harold R. Fetterman, Mohammed Ershad Ali, Kandadai S. Ramesh, Talal Azfar, Dwight C. Streit, Seok K. Han, and Kwang Y. Kang "Near-field millimeter-wave injection and its application in probing of high-frequency devices", Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); https://doi.org/10.1117/12.422131
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KEYWORDS
Near field optics

Extremely high frequency

Near field

Heterodyning

Switches

Field effect transistors

Receivers

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