Analysis of mechanism for the operational mode of lock-on in PCSSs

Renxi Gong; Yimen Zhang; Shunxiang Shi; Tongyi Zhang

doi:10.1117/12.401781

5 October 2000 Analysis of mechanism for the operational mode of lock-on in PCSSs

Renxi Gong, Yimen Zhang, Shunxiang Shi, Tongyi Zhang

Proceedings Volume 4223, Instruments for Optics and Optoelectronic Inspection and Control; (2000) https://doi.org/10.1117/12.401781
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

An experimental and theoretical investigation of PCSS's behaviors has been performed with emphasis on 'lock-on' is intimately related to bias voltage, triggering optical energy and the concentration of deep energy level trap in PCSS's by 2D simulation with MEDICI. This effect is observed only when the three factors all satisfy corresponding threshold values that vary with operational conditions. The reason is that under such condition, the distributions of the electric field, potential, carriers and current densities in PCSS's can be notably changed, the accumulation of carriers will be formed and electric field will be gradually enhanced in some region. It ultimately reaches the critical electric field for avalanche ionization, thus avalanche multiplication of carriers occurs.

Citation Download Citation

Renxi Gong, Yimen Zhang, Shunxiang Shi, and Tongyi Zhang "Analysis of mechanism for the operational mode of lock-on in PCSSs", Proc. SPIE 4223, Instruments for Optics and Optoelectronic Inspection and Control, (5 October 2000); https://doi.org/10.1117/12.401781

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