Paper
24 October 2000 High microwave performance of InGaP/GaAs HBT with beryllium-doped base grown by solid source MBE
Pan Yang, Hai Qun Zheng, Lye Heng Chua, Yongzhong Xiong, Hong Wang, Kaladhar Radhakrishnan, Soon Fatt Yoon, Geok Ing Ng
Author Affiliations +
Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405396
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
In this paper, we report for the first time the design, fabrication and characterization of high microwave performance InGaP/GaAs HBTs with beryllium doped base grown by slid-source MBE. Our InGaP/GaAs HBTs have achieved typical fT of 53 GHz and fmax of 40 GHz. These microwave performances are comparable to those of AlGaAs/GaAs with C-doped base and grown by MOCVD fabricated using similar process in our laboratory. Our results suggest that high performance InGaP/GaAs HBTs grown by solid-source MBE can be used for high volume production as in the case with their AlGaAs/GaAs HBT counterparts.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pan Yang, Hai Qun Zheng, Lye Heng Chua, Yongzhong Xiong, Hong Wang, Kaladhar Radhakrishnan, Soon Fatt Yoon, and Geok Ing Ng "High microwave performance of InGaP/GaAs HBT with beryllium-doped base grown by solid source MBE", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405396
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KEYWORDS
Gallium arsenide

Microwave radiation

Metalorganic chemical vapor deposition

Etching

Beryllium

Fourier transforms

Indium gallium phosphide

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