Paper
23 April 2001 Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular beam epitaxy
Takayuki Makino, Handong Sun, Tien Tuan Nguyen, Yusaburo Segawa, Chinhau Chia, Masashi Kawasaki, Akira Ohtomo, Kentaro Tamura, Hideomi Koinuma
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Abstract
Excitonic properties of high-quality ZnO/Zno,88Mgo.120 multiple quantum wells grown by laser molecular-beam epitaxy were investigated by excitonic absorption spectra taken at temperatures of 5—300 K. Strength of excitonphonon coupling was deduced from temperature dependence of linewidth of the fundamental excitonic absorption band. Significant reduction of the exciton-phonon coupling with decreasing the well width was observed, which is consistent with the confinement-induced enhancement of the exciton binding energy. The thermal shift of the lowest excitonic energy is independent of well width, suggesting the negligible strain effect characteristically inherent in this material. Growth temperature dependence of third-harmonic generation efficiency in (BaxSri1-x)2CuO3 alloyed epilayers is reported. It was found that, within the temperature range adopted in this work, the harmonic generation efficiency of the epilayer grown at higher temperature is larger than that grown at low temperature.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takayuki Makino, Handong Sun, Tien Tuan Nguyen, Yusaburo Segawa, Chinhau Chia, Masashi Kawasaki, Akira Ohtomo, Kentaro Tamura, and Hideomi Koinuma "Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular beam epitaxy", Proc. SPIE 4281, Combinatorial and Composition Spread Techniques in Materials and Device Development II, (23 April 2001); https://doi.org/10.1117/12.424746
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KEYWORDS
Excitons

Zinc oxide

Absorption

Quantum wells

Copper

Crystals

Nonlinear optics

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