Polymer-based optical amplifiers for operation at 1.55 um

Gauri V. Karve; Bipin Bihari; Ray T. Chen; Sridhar Govindraju; Scott Baumann; R. Bleiler

doi:10.1117/12.424786

27 April 2001 Polymer-based optical amplifiers for operation at 1.55 μm

Gauri V. Karve, Bipin Bihari, Ray T. Chen, Sridhar Govindraju, Scott Baumann, R. Bleiler

Proceedings Volume 4282, Rare-Earth-Doped Materials and Devices V; (2001) https://doi.org/10.1117/12.424786
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Erbium doped polymer waveguide amplifier for operation at 1.55 micrometers was studied. A fluorinated polyimide was doped with Er ions using ion implantation. The samples were irradiated at room temperature by 320 keV Er²⁺ and 160 keV Er⁺ ions. Doses used were 1 by 10¹⁵/cm² and 1 by 10¹⁴/cm² respectively. The implanted samples were characterized using Rutherford Backscattering and SIMS analysis. The implanted ion profile was nearly Gaussian with range of 0.25 micrometers for the 320 keV implant and 0.12 micrometers for the 160 keV implant. A Gaussian implanted ion profile, matched with the electric field profile of the waveguide mode, can enhance the efficiency of energy transfer between the waveguide mode and the active ions. The implant depth of Er in polyimide at the energies used is shallow. In order to achieve the overlap with the electric field profile, a two layer waveguide amplifier structure is proposed. Such doping and waveguide fabrication techniques are compatible with the existing silicon technology.

Citation Download Citation

Gauri V. Karve, Bipin Bihari, Ray T. Chen, Sridhar Govindraju, Scott Baumann, and R. Bleiler "Polymer-based optical amplifiers for operation at 1.55 μm", Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); https://doi.org/10.1117/12.424786

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