Paper
12 June 2001 Quantum dot intersubband photodetectors
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Abstract
Quantum dots are recognized as very promising candidates for the fabrication of intersubband photodetectors in the infrared spectral range. At present, material quality is making rapid progress and some devices have been demonstrated. Examples of mid-infrared quantum dot intersubband photodetectors are presented along with device design and data analysis. Nonetheless, the performance of these devices remains less than comparable quantum well intersubband photodetectors due to difficulties in controlling the quantum dot size and distribution during epitaxy.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Louis Jelen, Matthew Erdtmann, Seongsin Kim, and Manijeh Razeghi "Quantum dot intersubband photodetectors", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429402
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KEYWORDS
Quantum dots

Sensors

Photodetectors

Indium gallium phosphide

Quantum well infrared photodetectors

Infrared radiation

Gallium arsenide

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