Intersubband-electroluminescence from Si/SiGe quantum cascade structures

Gabriel Dehlinger; Laurent Diehl; Ulf Gennser; Hans Sigg; Jerome Faist; Detlev A. Gruetzmacher; Klaus Ensslin; Elizabeth Mueller

doi:10.1117/12.426922

18 May 2001 Intersubband-electroluminescence from Si/SiGe quantum cascade structures

Gabriel Dehlinger, Laurent Diehl, Ulf Gennser, Hans Sigg, Jerome Faist, Detlev A. Gruetzmacher, Klaus Ensslin, Elizabeth Mueller

Author Affiliations +

Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426922
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

We report the observation of electroluminescence from intersubband transitions in the valence band of Si/SiGe quantum cascade structures. The samples were grown by molecular beam epitaxy at 350 degree(s)C and reveal good crystal quality as determined by transmission electron microscopy and high resolution x-ray diffraction. The 4-fold quantum cascade structure is repeated 3 times interspersed by two Si spacer layers to reduce the high strain. Electrical contact is provided by the doped back and top contact layers. The electroluminescence of three samples is investigated. The peak energy of 130 meV to 150 meV is found to be close to the calculated value of the intended heavy hole (HH) 2 to HH1 transition of the respective sample. The luminescence signal is TM polarized as expected for intersubband transitions between HH levels. By comparison with a III-V quantum cascade structure the lifetime of the upper state could be determined; it was found that it depends strongly on the design, but it can reach values comparable to III-V quantum cascade structures.

Citation Download Citation

Gabriel Dehlinger, Laurent Diehl, Ulf Gennser, Hans Sigg, Jerome Faist, Detlev A. Gruetzmacher, Klaus Ensslin, and Elizabeth Mueller "Intersubband-electroluminescence from Si/SiGe quantum cascade structures", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426922

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