Paper
28 November 2000 Particulars of the growth of epitaxial films of PbSe1-xTex
H. R. Nuriyev, M. I. Abdullayev, S. S. Farzaliyev
Author Affiliations +
Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407741
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
The features of growth epitaxial films PbSe1-xTex (x=0,2) on substrates BaF2 by the epitaxy of molecular beam method are investigated. The optimum meanings of speed of condensation are certain and the temperatures of a substrate at which turn out of a film with perfect structure. The complex research of features of growth films in correlation with their physical properties is carried out. The structure films was supervised electronographic, X-ray diffractometric and electron-microscope by methods. It is established, that epitaxial films PbSe1-xTex on BaF2 (111) substrates grow by plane (111). It revealed, that epitaxial films brought up at temperatures of substrate 673K have monocrystal structure with half-width X- ray diffraction swing W1/2=80 divided by 100 and smooth surface without secondary inclusions.
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H. R. Nuriyev, M. I. Abdullayev, and S. S. Farzaliyev "Particulars of the growth of epitaxial films of PbSe1-xTex", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407741
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KEYWORDS
X-ray diffraction

X-rays

Crystals

Epitaxy

Molecular beams

Diffraction

Semiconductors

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