Novel photoacid generators for chemically amplified resists with g-line, i-line, and DUV exposure

Toshikage Asakura; Hitoshi Yamato; Akira Matsumoto; Masaki Ohwa

doi:10.1117/12.436880

24 August 2001 Novel photoacid generators for chemically amplified resists with g-line, i-line, and DUV exposure

Toshikage Asakura, Hitoshi Yamato, Akira Matsumoto, Masaki Ohwa

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436880
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

A new class of compounds, (5-alkylsulfonyloxyimino-5H-thiophen-2-ylidene)-2-methylphen yl-acetonitriles, characterized as non-ionic and halogen-free photoacid generators (PAG's) was developed. The compounds generate various kinds of sulfonic acids, such as methane, n-propane and camphor sulfonic acid under the g-line (436nm), i-line (365 nm) and Deep UV (DUV, 248 nm or shorter) exposure and are applicable for chemically amplified (CA) photoresists. The application-relevant properties of the compounds such as solubility in propylene glycol monomethyl ether acetate (PGMEA), UV absorption, thermal stability with or without poly(4-hydroxystyrene), storage stability in a neat form, sensitivity in some model resist formulations and dissolution inhibition efficiency during development process were evaluated. The compounds exhibit enough solubility in PGMEA, red-shifted UV absorption ($lamda_max: 405 nm), good thermal stability up to 140 C in a phenolic matrix, effective acid generation in terms of quantum yield in an acetonitrile solution and high sensitivity in negative tone and positive tone CA resist formulations, such as tert-butyl ester type and t-BOC type formulations, with g-line, i-line and DUV exposure. The photochemical decomposition reaction of the compound was also studied. Additionally a scanning electron microscope (SEM) photography as an application example of microlithography by the CA negative tone resist with the PAG is presented.

Citation Download Citation

Toshikage Asakura, Hitoshi Yamato, Akira Matsumoto, and Masaki Ohwa "Novel photoacid generators for chemically amplified resists with g-line, i-line, and DUV exposure", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436880

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