Simulation of 193-nm photoresists based on different polymer platforms

Doris Kang; Stewart A. Robertson; Edward K. Pavelchek

doi:10.1117/12.436818

24 August 2001 Simulation of 193-nm photoresists based on different polymer platforms

Doris Kang, Stewart A. Robertson, Edward K. Pavelchek

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436818
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Chemically amplified resist models for Shipley 193nm resists S6 and V2 were developed for use with commercial lithographic modeling software. S6 and V2 are based on methacrylate and vinyl ether/maleic anhydride polymer platforms, respectively, and contain an onium salt photoacid generator and proprietary base quencher. Fundamental parameters for these resists were determined experimentally and subsequently tuned to establish valid models. Current modeling algorithms appear sufficient to predict the lithographic behavior of typical features of interest. Experimental measurements that indicate that these 2 resists are similar with respect to acid photogeneration efficiency (0.04 cm²/mJ), polymer deprotection rate constant (0.05- 0.1 l/s), and developer selectivity. However, S6 exhibits greater transparency (0.35 1/micrometers vs. 0.5 1/micrometers for V2), lower acid diffusion, and greater surface inhibition. V2 exhibits considerably smoother dissolution.

Citation Download Citation

Doris Kang, Stewart A. Robertson, and Edward K. Pavelchek "Simulation of 193-nm photoresists based on different polymer platforms", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436818

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