Paper
1 February 2001 Rearrangement effects in inner-shell photodetachment from Sn-negative ion
Vadim K. Ivanov, Galina Yu. Kashenock, Constantin V. Lapkin
Author Affiliations +
Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417628
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation
Abstract
In this contribution we present the results of many-body calculation on electron photodetachment from inner subshells of Sn- negative ion. The main attention is paid to qualitative changes in the near threshold 4d cross section induced by rearrangement effects.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vadim K. Ivanov, Galina Yu. Kashenock, and Constantin V. Lapkin "Rearrangement effects in inner-shell photodetachment from Sn-negative ion", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); https://doi.org/10.1117/12.417628
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KEYWORDS
Ions

Surface plasmons

Chemical species

Tin

Solids

Germanium

Scattering

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