Paper
1 February 2001 Spin-polarized electron transport and emission from strained superlattices
Yuri A. Mamaev, Arsen V. Subashiev, Yuri P. Yashin, Anton N. Ambrajei, Alexander V. Roschansky
Author Affiliations +
Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417689
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation
Abstract
We report the results on polarized electron emission from a new strained wide-gap AlxInyGa1-x-yAs/AlzGa1- zAs SL with tunable position of polarization maximum. These SL's were optimized to have a minimal conduction-band offset which comes from the band line-up between the semiconductor layers of the SL. The In layer content was chosen to give minimal conduction-band offset with large strain splitting of the V-band. Simultaneous changing of Al content in both SL layers provides variation of the structure band gap. We demonstrate that tuning of the SL to the excitation energy can be achieved without loss of the electron polarization. The polarization of up to 84% was measured at room temperature.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri A. Mamaev, Arsen V. Subashiev, Yuri P. Yashin, Anton N. Ambrajei, and Alexander V. Roschansky "Spin-polarized electron transport and emission from strained superlattices", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); https://doi.org/10.1117/12.417689
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Stereolithography

Polarization

Superlattices

Aluminum

Gallium arsenide

Doping

Electron transport

Back to Top