Barrier height and current passage mechanisms in Schottky diodes based in MnxHg1-xTe

Andrey V. Markov; Oksana O. Bodnaruk; O. V. Lazareva; Sergey E. Ostapov; Ilary M. Rarenko; R. A. Shevchuk

doi:10.1117/12.417806

22 February 2001 Barrier height and current passage mechanisms in Schottky diodes based in Mn_xHg_1-xTe

Andrey V. Markov, Oksana O. Bodnaruk, O. V. Lazareva, Sergey E. Ostapov, Ilary M. Rarenko, R. A. Shevchuk

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417806
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

The theoretical and experimental investigations of the main zone parameters of the quaternary solid solutions CdMnHgTe and MnHgTe are represented in the given paper. As a result of these investigations the empirical formulae for the energy gap width and intrinsic carrier concentration in the wide range of the temperature and compositions are proposed. The results of the theoretical calculations agree well with the experimental data. On the base of these empirical expressions the calculation of the Schottky diode main parameters have been carried out. The Schottky barrier height calculation procedure was examined. This procedure take into account the influence of surface states and intermediate dielectric layer. The theoretical calculation results are compated with experimental data.

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Andrey V. Markov, Oksana O. Bodnaruk, O. V. Lazareva, Sergey E. Ostapov, Ilary M. Rarenko, and R. A. Shevchuk "Barrier height and current passage mechanisms in Schottky diodes based in Mn_xHg_1-xTe", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417806

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