Ferromagnetic and ferroelectric phase transitions in IV-VI semiconductors

George V. Lashkarev; M. V. Radchenko

doi:10.1117/12.417771

22 February 2001 Ferromagnetic and ferroelectric phase transitions in IV-VI semiconductors

George V. Lashkarev, M. V. Radchenko

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417771
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

The review including personal input of the authors is devoted to the theoretical basis and experimental researches of ferromagnetic and ferroelectrics phase transitions in IV-VI semiconductors. The exclusive role of manganese in promoting of ferromagnetic interaction is shown. The magnetic phenomena in Pb_1-XSn_XTe doped by manganese and in solid solutions Pb_1-X-YSn_XMn_yTe are outlined. These phenomena include the appearance the exchange thermoelectric power (TP), the additional TP, promoted by electron scattering on magnetic centers, ferromagnetic ordering at high hole concentration by the appearance of anomalous Hall effect and negative resistivity. The theoretical considerations of ferroelectric structural transitions (ST) due to electron- phonon interband interaction and ordering of the dipoles obliged to noncentral ions are outlined. The author's data about the effect of ST on magnetic susceptibility (MS) and TP are described. The first observations of paramagnetic splashes of MS at ST, breaks or bends on TP temperature dependences, the existence of hysteresis phenomena, the influence of the degeneration of electron gas on TP are described. The ideas concerning the applications of diluted magnetic semiconductors in magnetoelectronic devices are outlined.

Citation Download Citation

George V. Lashkarev and M. V. Radchenko "Ferromagnetic and ferroelectric phase transitions in IV-VI semiconductors", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417771

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available