In-line monitoring of process-induced damage through chemical contamination in microelectronic manufacturing

Dumitru Gh. Ulieru

doi:10.1117/12.425285

23 April 2001 In-line monitoring of process-induced damage through chemical contamination in microelectronic manufacturing

Dumitru Gh. Ulieru

Author Affiliations +

Proceedings Volume 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425285
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

Surface Charge (SCA), is an electro-optical method which allows for immediate and non-destructive characterization of the electronic properties of the semiconductor/insulator system. Unlike conventional capacitance techniques it does not require formation of a gate electrode and direct electrical contacts. It determines the electronic properties of the system from surface photovoltage measurements of the depletion layer width as a function of an external electric field. The method allows for determination of the dielectric (oxide) charge, energy distribution of the interface trap density, doping type and doping concentration at the semiconductor surface. Capabilities of the SCA technique extend from the bare surface to several microns thick dielectric coatings. These are demonstrated for Si wafers in such applications as dry and wet cleaning, oxidation and deposition processes.

Citation Download Citation

Dumitru Gh. Ulieru "In-line monitoring of process-induced damage through chemical contamination in microelectronic manufacturing", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); https://doi.org/10.1117/12.425285

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