Paper
17 April 2001 Integrated photoreceivers with MSM and PIN photodetectors for high-frequency applications
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Abstract
The results of investigation of PIN and MSM photo detectors fabricated in our Semiconductor Device Laboratory are presented. Discrete chips of PIN and MSM photo detectors and similar photo detectors integrated with a MESFET amplifier within a single MMIC chip were tested and compared. The structures were designed for range of wavelengths from 870nm to 1000nm. To accomplish this, the InxGa1-xAs absorption layer with appropriate cantent of indium has been used as an active layer. All structures have been fabricated using Metal Organic Vapor Phase Epitaxy (MOVPE) growth on GaAs substrates with the use of different buffer and matching layer configuration. I-V and spectral characteristics of the PIN and MSM photo detectors and also MMIC structures with the MSM photo detector were evaluated. Time response to the optical pulse excitation has been measured. All designs were compared from the point of view of their application in the optoelectronic integrated circuits.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marek J. Tlaczala "Integrated photoreceivers with MSM and PIN photodetectors for high-frequency applications", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425459
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KEYWORDS
Photodetectors

Gallium arsenide

Sensors

Field effect transistors

Reflectors

Optical amplifiers

Optical instrument design

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