Infrared laser annealing of nanoporous silicon

Valerii P. Aksenov; G. N. Mikhailova; Johannes Boneberg; Paul Leiderer; H.-J. Muenzer

doi:10.1117/12.431242

26 June 2001 Infrared laser annealing of nanoporous silicon

Valerii P. Aksenov, G. N. Mikhailova, Johannes Boneberg, Paul Leiderer, H.-J. Muenzer

Proceedings Volume 4423, Nonresonant Laser-Matter Interaction (NLMI-10); (2001) https://doi.org/10.1117/12.431242
Event: Nonresonant Laser-Matter Interaction (NLMI-10), 2000, St. Petersburg, Russian Federation

Abstract

We have investigated the correlation of photoluminescence (PL) properties with certain etching conditions and laser annealing of porous silicon (PS). We used the optical second-harmonic generation and photoluminescence methods for studies of IR laser annealing of porous silicon. We observed that IR illumination by series of laser pulses causes decreasing of SH signal and increasing of luminescence efficiency for PS samples.

Citation Download Citation

Valerii P. Aksenov, G. N. Mikhailova, Johannes Boneberg, Paul Leiderer, and H.-J. Muenzer "Infrared laser annealing of nanoporous silicon", Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); https://doi.org/10.1117/12.431242

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