Wavelength dependence of laser cleaning for field emitter arrays

Mikio Takai; Naoki Suzuki; Oguz Yavas; Akihiko Hosono; Soichiro Okuda

doi:10.1117/12.456820

25 February 2002 Wavelength dependence of laser cleaning for field emitter arrays

Mikio Takai, Naoki Suzuki, Oguz Yavas, Akihiko Hosono, Soichiro Okuda

Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456820
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore

Abstract

Different harmonics of the Nd:YLF laser, ranging from infrared to ultraviolet wavelength region ((lambda) equals1047, 523, and 349 nm), were used for cleaning of Nb-gated silicon field emitter tips to improve the emission efficiency. An increase of the emission current by a factor of 5 after laser irradiation was observed only in case of ultraviolet laser irradiation at (lambda) equals349 nm, indicating that contaminants were successfully removed from the tip surface and the cleaning process was strongly wavelength dependent.

Citation Download Citation

Mikio Takai, Naoki Suzuki, Oguz Yavas, Akihiko Hosono, and Soichiro Okuda "Wavelength dependence of laser cleaning for field emitter arrays", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456820

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available