Paper
29 June 2001 Influence of a-Si:H buffer layers on the properties of CNx materials
B. Mitu, Gheorghe H. Dinescu, E. Aldea, Maria Dinescu, A. Ferrari, M. Balucani, G. Lamedica
Author Affiliations +
Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432920
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania
Abstract
On the basis of ab initio calculations, the (alpha) , (beta) - C3N4 crystalline compounds have been proposed as promising materials for optical applications in ultraviolet and visible. However, these crystalline forms of carbon nitride have been hardly obtained, mostly the formation of amorphous material being noticed. Previously, deposition of amorphous carbon nitride from an RF plasma jet operating in nitrogen with graphite electrodes was reported. This work reports on the deposition and characterization of carbon nitride thin films by RF nitrogen plasma beam with graphite electrodes either on glass on crystalline Si or on intermediate a-Si:H buffer layers. The layers properties (composition, crystallinity and absorption in ultraviolet, visible and infrared) have been studied by x-ray photoelectron spectroscopy (XPS), FTIR (Fourier transform infrared spectroscopy) and UV-VIS absorption, energy dispersive x-ray analysis (EDX) and x-ray diffraction (XRD) techniques. It is shown that amorphous carbon nitride materials with variable optical bandgap in the range 1.2-3.5 eV can be obtained. Also, the formation of an intermediate SiCN interlayer and the promotion of crystallinity in CNx films, due to buffer layer presence, is proved.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Mitu, Gheorghe H. Dinescu, E. Aldea, Maria Dinescu, A. Ferrari, M. Balucani, and G. Lamedica "Influence of a-Si:H buffer layers on the properties of CNx materials", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); https://doi.org/10.1117/12.432920
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KEYWORDS
Carbon

Crystals

Absorption

Silicon

Plasma

Silicon carbide

Nitrogen

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