THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

Tze-An Liu; Masahiko Tani; Gong-Ru Lin; Ci-Ling Pan

doi:10.1117/12.455413

27 December 2001 THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs

Tze-An Liu, Masahiko Tani, Gong-Ru Lin, Ci-Ling Pan

Author Affiliations +

Proceedings Volume 4490, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications; (2001) https://doi.org/10.1117/12.455413
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Significant difference in temporal and spectral characteristics of THz radiation emitted by large- (1mm) and small- (5micrometers ) aperture dipole antennas fabricated on arsenic-ion-implanted GaAs and undoped semi-insulating GaAs is reported and attributed to the geometry of the antenna.

Citation Download Citation

Tze-An Liu, Masahiko Tani, Gong-Ru Lin, and Ci-Ling Pan "THz emission characteristics of photoconductive antennas with different gap size fabricated on arsenic-ion-implanted GaAs", Proc. SPIE 4490, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications, (27 December 2001); https://doi.org/10.1117/12.455413

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