Paper
11 March 2002 Illumination spectral width impacts on mask error enhancement factor and iso-dense bias in 0.6-NA KrF imaging
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Abstract
In this study, process latitude, mask error enhancement factor and iso-dense bias have been experimentally measured as a function of the KrF excimer laser bandwidth. The experiment results are in agreement with photoresist simulations over a range of imaged nominal feature sizes from 120nm to 300nm at 0.6/0.75 NA/(sigma) . The mask error enhancement factor (MEEF) is shown to vary by approximately 2.3 percent for 160nm and 3.3 percent for 150nm isolated lines per 0.1pm of excimer-laser bandwidth, characterized by the full width at half maximum (FWHM). The 180nm line iso-dense bias exhibits a shift of approximately 2nm per 0.1pm FWHM. Under the given process conditions, linear empirical relationships are derived for the dependency of MEEF and iso-dense offset on FWHM excimer-laser spectral width for a range of imaged CDs. Such considerations can be used to augment the existing predictive CD-control estimation and model-based optical proximity correction.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan Lalovic, Armen Kroyan, Paolo Zambon, Christopher D. Silsby, and Nigel R. Farrar "Illumination spectral width impacts on mask error enhancement factor and iso-dense bias in 0.6-NA KrF imaging", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458263
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CITATIONS
Cited by 3 scholarly publications and 3 patents.
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KEYWORDS
Photoresist materials

Photomasks

Lithography

Critical dimension metrology

Semiconducting wafers

Excimer lasers

Manufacturing

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