Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode-laser characteristics

Yan-Rui Zhao; Y. C. Xin; Ronghua Wang; Mauro F. Vilela; Gennady A. Smolyakov; Marek Osinski

doi:10.1117/12.446551

29 October 2001 Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode-laser characteristics

Yan-Rui Zhao, Y. C. Xin, Ronghua Wang, Mauro F. Vilela, Gennady A. Smolyakov, Marek Osinski

Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446551
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

Broad-area InGaAs/GaAs/AlGaAs double-quantum-well graded- index separate-confinement heterostructure diode lasers with non-intermixed and intermixed active regions were fabricated and characterized. Their light-current characteristics were used to extract information about the effects of impurity- free vacancy diffusion intermixing process on threshold current density, internal optical loss, internal quantum efficiency, material gain, etc. Comparison between these parameters indicates comparable device performance, even though lasers with intermixed active region underwent annealing at 1000 degrees C for 30 s and showed 42 nm wavelength blue shift.

Citation Download Citation

Yan-Rui Zhao, Y. C. Xin, Ronghua Wang, Mauro F. Vilela, Gennady A. Smolyakov, and Marek Osinski "Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode-laser characteristics", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446551

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