Flow-rate modulation epitaxy of ZnSxSe1-x on GaAs

Min Yen Yeh; Hung Ming Yen; Wen Ruey Tsai; Chung Chen Hsieh; Yao Song Lee; Shan Cheng Pan; Wuu Wen Lin

doi:10.1117/12.445706

16 October 2001 Flow-rate modulation epitaxy of ZnS_xSe_1-xon GaAs

Min Yen Yeh, Hung Ming Yen, Wen Ruey Tsai, Chung Chen Hsieh, Yao Song Lee, Shan Cheng Pan, Wuu Wen Lin

Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445706
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

The ZnS_0.06Se_0.94 epilayer is obtained by metallorganic chemical vapor deposition (MOCVD) with Se on-off modulation. The activation energy of as grown ZnS_xSe_{1- x} layer is lower than that by conventional growth method. From the 77 K photoluminescence spectra, high quality of as grown layer is obtained as the composition of ZnS_xSe_{1- x} reaches x equals 0.06 with which the lattice of ZnS_0.06Se_0.94 matches that of GaAs substrate. The 77K near band edge emission peak of as grown ZnS_0.06Se_0.94 is observed at 441.5 nm and the full width at half maximum of 12.7 meV is obtained.

Citation Download Citation

Min Yen Yeh, Hung Ming Yen, Wen Ruey Tsai, Chung Chen Hsieh, Yao Song Lee, Shan Cheng Pan, and Wuu Wen Lin "Flow-rate modulation epitaxy of ZnS_xSe_1-xon GaAs", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445706

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