Photoelectronic studies of an asymmetric step quantum-well middle wavelength infrared detector

Wen-Gang Wu; Zhibin Chen

doi:10.1117/12.445754

16 October 2001 Photoelectronic studies of an asymmetric step quantum-well middle wavelength infrared detector

Wen-Gang Wu, Zhibin Chen

Proceedings Volume 4602, Semiconductor Optoelectronic Device Manufacturing and Applications; (2001) https://doi.org/10.1117/12.445754
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

Photoelectronic characteristics of the fabricated In_xGa_1-xAs/Al_yGa_{1- y}As/Al_zGa_1-zAs asymmetric step quantum-well middle wavelength (3 to approximately 5 micrometers ) infrared detectors are studied. The components display photovoltaic-type photocurrent response as well as the bias- controlled modulation of the peak wavelength of the main response, which is ascribed to the Stark shifts of the intersubband transitions from the local ground states to the extended first excited states in the quantum wells, at the 3 to approximately 5.3 micrometers infrared atmospheric transmission window. The blackbody detectivity (D_bb*) of the detectors reaches to about 1.0 X 10¹⁰ cm(DOT)Hz^1/2/W at 77 K under bias of +/- 7 V. By expanding the electron wave function in terms of normalized plane wave basis withn the framwork of the effective-mass envelope-function theory, the linear Stark effects of the intersubband tansitions between the ground and first excited states in the asymmetric step well are calculated. The obtained results agree well with the corresponding experimental measurements.

Citation Download Citation

Wen-Gang Wu and Zhibin Chen "Photoelectronic studies of an asymmetric step quantum-well middle wavelength infrared detector", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445754

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