GaN-based tunnel junction in optical devices

Tetsuya Takeuchi; G. Hasnain; Scott W. Corzine; Mark Hueschen; Richard P. Schneider Jr.; Christophe P. Kocot; M. Blomqvist; Ying-Lan Chang; D. Lefforge; Michael R. Krames; Lou W. Cook; Steve A. Stockman; J. Han; M. Diagne; Yi-Fei He; E. Makarona; Arto V. Nurmikko

doi:10.1117/12.470561

12 June 2002 GaN-based tunnel junction in optical devices

Tetsuya Takeuchi, G. Hasnain, Scott W. Corzine, Mark Hueschen, Richard P. Schneider Jr., Christophe P. Kocot, M. Blomqvist, Ying-Lan Chang, D. Lefforge, Michael R. Krames, Lou W. Cook, Steve A. Stockman, J. Han, M. Diagne, Yi-Fei He, E. Makarona, Arto V. Nurmikko

Author Affiliations +

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470561
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

We have demonstrated hole injection through a tunnel junction embedded in the GaN-based light emitting diode structure. The tunnel junction consists of 30 nm GaN:Si⁺⁺ and 15 nm InGaN:Mg⁺⁺ grown on a GaN-InGaN quantum well heterostructure. The forward voltage of the light emitting diode, included the voltage drop across the reverse-biased tunnel junction, is 4.1 V at 50 Z/cm$_2), while that of a standard light emitting diode with a conventional contact structure is 3.5 V. The light output of the diode with the tunnel junction is comparable to that of the standard device. We then employed the tunnel junction in vertical cavity surface emitting laser structures and dual-wavelength light emitters. In the vertical cavity structure, a good lateral current spreading was accomplished, resulting in uniform emission pattern. The dual-wavelength light emitter has been operated as a three- terminal device with independent electrical control of each LEDs to a nsec time scale.

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Tetsuya Takeuchi, G. Hasnain, Scott W. Corzine, Mark Hueschen, Richard P. Schneider Jr., Christophe P. Kocot, M. Blomqvist, Ying-Lan Chang, D. Lefforge, Michael R. Krames, Lou W. Cook, Steve A. Stockman, J. Han, M. Diagne, Yi-Fei He, E. Makarona, and Arto V. Nurmikko "GaN-based tunnel junction in optical devices", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470561

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