Paper
16 April 2002 Failure mode analysis of high-power laser diodes
Robert G. Ahrens, James J. Jaques, Niloy K. Dutta, Michael J. LuValle, Alfonso B. Piccirilli, Ron M. Camarda, Anthony B. Fields, Kenneth R. Lawrence
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Abstract
In this paper, we present the results of a preliminary investigation on the reliability of high power optical diodes. Commercially available 970 nm optical diodes were subjected to various levels of stress, including: operating current, optical power and operating temperature. Optical diodes that failed during testing were subsequently analyzed using a variety of techniques, including: optical microscopy, scanning electron microscopy, eletroluminescence, and near-field profiling. It has been observed that the major cause of optical failure can be attributed to damage on the emitting facet of the optical diodes. Preliminary evidence suggests that facet damage is a result of catastrophic optical damage.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert G. Ahrens, James J. Jaques, Niloy K. Dutta, Michael J. LuValle, Alfonso B. Piccirilli, Ron M. Camarda, Anthony B. Fields, and Kenneth R. Lawrence "Failure mode analysis of high-power laser diodes", Proc. SPIE 4648, Test and Measurement Applications of Optoelectronic Devices, (16 April 2002); https://doi.org/10.1117/12.462657
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Cited by 2 scholarly publications.
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KEYWORDS
Diodes

Failure analysis

Optical isolators

Electroluminescence

Near field optics

Near field

Manufacturing

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