Paper
21 May 2002 Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared
Gail J. Brown, Joseph E. Van Nostrand, S. M. Hedge, W. J. Siskaninetz, Qianghua Xie
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Abstract
The optical properties of an (formula available in paper) type-II superlattice lattice matched to InP(001) was characterized by photo luminescence and near infrared photoresponse. The samples were designed for optical emission near 1.8micrometers and were grown by molecular beam epitaxy. At 4K, a strong type-II luminescence at 1.8micrometers (689meV0 with a full width at half maximum (FWHM) of 18 meV was observed. Similarly, the onset of the band edge photoresponse occurred at 1.8micrometers (693 meV) at 10K. We believe this to be the first observation of both luminescence and photoresponse from the InGaAs/GaAsSb/InP materials system grown by any technique.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gail J. Brown, Joseph E. Van Nostrand, S. M. Hedge, W. J. Siskaninetz, and Qianghua Xie "Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); https://doi.org/10.1117/12.467662
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Cited by 3 scholarly publications.
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KEYWORDS
Superlattices

Luminescence

Near infrared

Stereolithography

Photodetectors

Calibration

Heterojunctions

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