Pattern printability for off-axis incident light in EUV lithography

Minoru Sugawara; Masaaki Ito; Taro Ogawa; Eiichi Hoshino; Akira Chiba; Shinji Okazaki

doi:10.1117/12.472301

1 July 2002 Pattern printability for off-axis incident light in EUV lithography

Minoru Sugawara, Masaaki Ito, Taro Ogawa, Eiichi Hoshino, Akira Chiba, Shinji Okazaki

Author Affiliations +

Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002) https://doi.org/10.1117/12.472301
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Off-axis incident light produces shadowing and an imbalance in the diffracted light. Shadowing causes a change in the critical dimension (CD) and a shift in the position of patterns due to the swing + bulk effect of the absorber and buffer layers. In addition, the imbalance in the diffracted light influences the optical proximity-effect correction (OPC) of actual patterns with a k1 below 0.6. In this study, the main factors influencing OPC were investigated. These include asymmetric aberrations and optical proximity effects (OPE) in line patterns. OPC was then applied to a T-shaped pattern. It is found that the mask error factor (MEF) in low-contrast regions of a layout is an important consideration in OPC.

Citation Download Citation

Minoru Sugawara, Masaaki Ito, Taro Ogawa, Eiichi Hoshino, Akira Chiba, and Shinji Okazaki "Pattern printability for off-axis incident light in EUV lithography", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472301

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