Maximizing common process latitude by integrated process development for 130-nm lithography

Michael T. Reilly; Colin R. Parker; Frank W. Fischer; Todd Hiar

doi:10.1117/12.474626

30 July 2002 Maximizing common process latitude by integrated process development for 130-nm lithography

Michael T. Reilly, Colin R. Parker, Frank W. Fischer, Todd Hiar

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474626
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Maximized inherent common process latitude of 130 nm line/space features through pitch is demonstrated in this work. It is shown that the principle method for doing so is by reducing the through pitch, or proximity, bias. The effects that formulation, illumination optics and mask error have on proximity bias are studied. Formulations exhibit a wide range of bias that does not necessarily depend upon activation energy or process temperatures. Optical settings for inner and outer sigma for both annular and quadrupole illumination, likewise, have a demonstrable effect on the proximity bias. Larger, tighter annuli or poles produce larger bias, while lower settings incur a loss of resolution. Either effect limits the common latitude so a balance is struck between them. Additionally, while the effect of outer sigma is obvious in the data, the inner sigma effect is not observed until data are corrected for mask error and the mask error factor. The proximity bias ranges between approximately 10 and 80 nm, depending upon the combination of conditions. Sub-resolution assist features (scattering bars) are specifically excluded from use in this experiment.

Citation Download Citation

Michael T. Reilly, Colin R. Parker, Frank W. Fischer, and Todd Hiar "Maximizing common process latitude by integrated process development for 130-nm lithography", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474626

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