Paper
23 January 2003 Growth and characterization of CdTe and CdZnTe crystals for substrate application
Moshe Azoulay, Raphael Zilber, Sergy Shusterman, Alex Goldgirsh, Itzhak Zontag
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Abstract
During the last decade we have investigated the synthesis, growth and characterization of CdTe and CdZnTe semiconductor compounds. As a result, substrate crystals, suitable for mercury cadmium telluride thin film growth are prepared. The emphasis will be given to the investigation of the thermal regime during growth, reflected at the solid liquid interface shape and its influence on the crystalline quality. Seeded and unseeded growth experiments are compared in terms of structural crystalline quality. Seeded and unseeded growth experiments are compared in terms of structural crystalline perfection as well as single crystal yield. The effect of thermal annealing on IR transmittance, precipitates and inclusions will be discussed in detail. Moreover, we will show the recent new trends for simulation of crystal growth processes by CRYSVUN software as well as practical implementation of calculated data for the grwoth of II-VI crystals. Preliminary study on the vapor phase control during growth and crystal cooling procedures will also be discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Moshe Azoulay, Raphael Zilber, Sergy Shusterman, Alex Goldgirsh, and Itzhak Zontag "Growth and characterization of CdTe and CdZnTe crystals for substrate application", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); https://doi.org/10.1117/12.451221
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Cited by 2 scholarly publications.
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KEYWORDS
Crystals

Interfaces

Annealing

Mercury cadmium telluride

Semiconducting wafers

Solids

Transmittance

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