Advanced CD linearity improvement for multiproject wafers and SoC at 95-nm technology node

Jeremy Lu; Nicole L. Sandlin; Hidetoshi Sato; Colbert Lu; Nicole Cheng; Torey Huang; Clyde Su; Melisa J. Buie

doi:10.1117/12.467750

27 December 2002 Advanced CD Linearity Improvement for Multi-Project Wafers and SoC at 95 nm Technology Node

Jeremy Lu, Nicole L. Sandlin, Hidetoshi Sato, Colbert Lu, Nicole Cheng, Torey Huang, Clyde Su, Melisa J. Buie

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467750
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

The continuous shrinking of design rules results in tighter specifications for linearity in advanced mask processing. Specifically, the increasing need for multiple devices on a single reticle set, e.g., multiproject wafers (MPWs) and systems on a chip (SoC), drives development in this area. Advanced masks were prepared with positive and negative chemically amplified resist (CAR) written on the Hitachi HL-950M. Post-exposure bake was performed in a double-sided proximity baking system; development was done using a spray-puddle method. Etch experiments were performed in the Etec Systems Tetra photomask etch chamber. Linearity measurements were performed using the Hitachi S-7840 CD SEM and the Leica LWM 250 DUV. Both clear and dark isolated and dense features were measured. The current work examines the impact of various etch process parameters (Cl₂/O₂ ratio, gas flow, pressure, source power) on CD linearity between 400 nm and 1.25 μm. A full factorial-designed orthogonal experiment was performed to determine the main effects and any interactions that might impact the linearity performance. Pressure and total flow showed a strong influence on linearity.

Citation Download Citation

Jeremy Lu, Nicole L. Sandlin, Hidetoshi Sato, Colbert Lu, Nicole Cheng, Torey Huang, Clyde Su, and Melisa J. Buie "Advanced CD Linearity Improvement for Multi-Project Wafers and SoC at 95 nm Technology Node", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467750

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