Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells

Yen-Sheng Lin; Kung-Jen Ma; Yi-Yin Chung; Chih-Wen Liu; Shih-Wei Feng; Yung-Chen Cheng; Chih Chung Yang; Cheng-Ta Kuo; Jian-Shihn Tsang

doi:10.1117/12.482212

5 September 2002 Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells

Yen-Sheng Lin, Kung-Jen Ma, Yi-Yin Chung, Chih-Wen Liu, Shih-Wei Feng, Yung-Chen Cheng, Chih Chung Yang, Cheng-Ta Kuo, Jian-Shihn Tsang

Author Affiliations +

Proceedings Volume 4913, Semiconductor Lasers and Applications; (2002) https://doi.org/10.1117/12.482212
Event: Photonics Asia, 2002, Shanghai, China

Abstract

It is shown that post-growth thermal annealing of such a sample with temperature ranging from 800 to 900 °C led to a better confinement of indium rich clusters near InGaN quantum well layers. Transmission electron microcopy (TEM) and energy filter TEM results manifested that the sizes of indium-rich QDs were reduced with increasing annealing temperature. Also, the size homogeneity was improved. Quasi-regular arrays of indium-rich QDs embedded in InGaN quantum wells were observed in the sample of 900 °C annealing. X-ray diffraction also showed the enhancement of InN relative intensity. Photoluminescence measurements revealed blue shifts of photon emission spectral peak, indicating stronger quantum confinement after thermal annealing.

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Yen-Sheng Lin, Kung-Jen Ma, Yi-Yin Chung, Chih-Wen Liu, Shih-Wei Feng, Yung-Chen Cheng, Chih Chung Yang, Cheng-Ta Kuo, and Jian-Shihn Tsang "Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482212

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