Paper
20 September 2002 Profilometry using two-photon absorption of silicon avalanche photodiode
Yosuke Tanaka, Takashi Kurokawa
Author Affiliations +
Abstract
Though silicon photodetectors are usually insensitive to near infrared light of the wavelength longer than 1100 nm, they become sensitive to it with high intensity, producing photocurrent in proportion to the square of the intensity. This is due to two-photon absorption (TPA) process. So far, the TPA process in silicon photodetectors has mainly been applied to measuring the waveform of optical short pulses, since it can give the intensity correlation of incident light signals. In this paper, as a new application of the TPA process in photodetectors, we propose a novel profilometry based on Michelson interferometer with optical microwave as a light source and avalanche photodiode as a two-photon absorber. In contrast to the classical heterodyne profilometer that measures the optical path length difference from the phase of the modulated optical signal, the dynamic range of the TPA method is not limited by the bandwidth of a photodetector and attached electronic devices. The TPA method can realize the dynamic range of several millimeters to several ten meters with simple setup. The principle of the TPA based profilometry is experimentally demonstrated using fiber optic Michelson interferometer.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yosuke Tanaka and Takashi Kurokawa "Profilometry using two-photon absorption of silicon avalanche photodiode", Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); https://doi.org/10.1117/12.465748
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KEYWORDS
Silicon

Photodetectors

Absorption

Avalanche photodetectors

Modulation

Avalanche photodiodes

Michelson interferometers

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