Paper
15 January 2003 Expansion of SU-8 application scope by PAG concentration modification
Author Affiliations +
Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003) https://doi.org/10.1117/12.478254
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States
Abstract
In recent year SU-8 has became the most attractive photoresist in both optical and x-ray lithography. In our early work we have optimized its exposure parameters to improve the patterning quality in UV lithography and concluded that the UV absorption in SU-8 is proportional to the concentration of photoacidgenerator (PAG) and limiting the applicable SU-8 thickness in UV lithography. Actually, the PAG concentration plays an important role in all aspects of SU-8 processing in both optical and x-ray lithography. The motivation of this work is to expand the applicable thickness and application scope and improve processing control of SU-8 by optimizing its PAG concentration. In this paper we present the most recent experimental results on lithographic performance of SU-8 with different PAG concentration (varying up to 2 orders of magnitude). It includes determining the minimum bottom dose and minimum effective energy density in x-ray and UV lithography of SU-8, respectively, observing the dimensional change of SU-8 microstructure at different post exposure bake (PEB) temperature and time and measuring UV absorption spectrum of SU-8 as the function of PAG concentration. The modified SU-8 resists have moderate sensitivities and lower absorption coefficients. The application of the modified SU-8 will be addressed and demonstrated.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhong-geng Ling and Kun Lian "Expansion of SU-8 application scope by PAG concentration modification", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); https://doi.org/10.1117/12.478254
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Cited by 5 scholarly publications.
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KEYWORDS
Ultraviolet radiation

X-ray lithography

Absorption

Lithography

X-rays

Semiconducting wafers

Photomasks

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