Effect of device parameters on the bandwidth calculations of ultrahigh-speed optical modulators

B. M. Azizur Rahman; Shyqyri Haxha; Kenneth T. V. Grattan

doi:10.1117/12.474372

25 July 2003 Effect of device parameters on the bandwidth calculations of ultrahigh-speed optical modulators

B. M. Azizur Rahman, Shyqyri Haxha, Kenneth T. V. Grattan

Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.474372
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

The effect of velocity matching, impedance matching, conductor loss and dielectric loss on the optical bandwidth of an ultra-high-speed lithium niobate (LN) modulator is reported by using the finite element method. It is shown that for an etched LN modulator the product V_πL could be reduced by 30% and it is also relatively easier to match both N_m and Z_c simultaneously. The work indicates that both the dielectric loss and impedance matching play a key role for velocity matched high-speed modulators along with the low conductor loss. The effects of etch depth, buffer thickness, electrode width and the gap between the electrodes on device performance are also illustrated.

Citation Download Citation

B. M. Azizur Rahman, Shyqyri Haxha, and Kenneth T. V. Grattan "Effect of device parameters on the bandwidth calculations of ultrahigh-speed optical modulators", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.474372

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