Ultrafast carrier dynamics in InGaN MQW laser diode

Kian-Giap Gan; Chi-Kuang Sun; John Edward Bowers; Steven P. DenBaars

doi:10.1117/12.475718

30 May 2003 Ultrafast carrier dynamics in InGaN MQW laser diode

Kian-Giap Gan, Chi-Kuang Sun, John Edward Bowers, Steven P. DenBaars

Proceedings Volume 4992, Ultrafast Phenomena in Semiconductors VII; (2003) https://doi.org/10.1117/12.475718
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

The ultrafast carrier dynamics in InGaN multiple quantum well (MQW) laser diodes were investigated using a time-resolved bias-lead monitoring techniques. Both pump and probe beams were from the second harmonic generation (SHG) of a tunable 100-fs Ti:Sapphire modelocked laser. From the optical selection rules of TE and TM polarized lights, one can selectively excite and probe different valance subbands to conduction band transitions in the MQW structure with different polarized pump and probe light. Using this technique, ultrafast inter-subband hole relaxation processes were found to dominate the observed carrier dynamics.

Citation Download Citation

Kian-Giap Gan, Chi-Kuang Sun, John Edward Bowers, and Steven P. DenBaars "Ultrafast carrier dynamics in InGaN MQW laser diode", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); https://doi.org/10.1117/12.475718

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