GaAs-based tunnel junctions

C. Moeller; J. Boettcher; Harald Kuenzel

doi:10.1117/12.514616

11 June 2003 GaAs-based tunnel junctions

C. Moeller, J. Boettcher, Harald Kuenzel

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514616
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The development of high quality GaAs-based tunnel junctions grown by molecular beam epitaxy was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance of less than 7 x 10^-5 Ω/cm² and a peak current density of > 1900 A/cm². The enhancement of lateral current spreading is demonstrated by large-area vertical-emitting LEDs.

Citation Download Citation

C. Moeller, J. Boettcher, and Harald Kuenzel "GaAs-based tunnel junctions", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514616

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