Inelastic inyer-valence-band scattering of photoexcited holes in quantum dot structures

B. H. Bairamov; B. P. Zakharchenya; V. V. Toporov; V. A. Voitenko; F. B. Bairamov; Mohamed Henini

doi:10.1117/12.513861

11 June 2003 Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures

B. H. Bairamov, B. P. Zakharchenya, V. V. Toporov, V. A. Voitenko, F. B. Bairamov, Mohamed Henini

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.513861
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

We obtain inelastic electronic light scattering for interband transitions between valence-band states of GaAs layer embedded by self-assembled InAs quantum dots (QDs). Under a low-power selective cw excitation above the InAs band gap but below that of GaAs at a lattice temperature T_l = 5.1 K we find anomalous photoexcitation of carriers in the InAs QDs. Unusual photoinjection of the carriers to the GaAs barrier via strong Coulomb interactions results in creation of the nonequilibrium electron-hole plasma in the GaAs layer with density of n = p = 2.5 x 10¹⁸ cm^-3 and an electron temperature T_e = 25 K. Observed spectra reflects the band anisotropy and extends from zero to rather large frequency shifts with a long tail with a peak at about 300 - 400 cm^-1 in good agreement with theoretical prediction.

Citation Download Citation

B. H. Bairamov, B. P. Zakharchenya, V. V. Toporov, V. A. Voitenko, F. B. Bairamov, and Mohamed Henini "Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513861

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