Resonant broadening of two-dimentional state in semiconductors with inverted band structure

Alexander V. Germanenko; Grigori M. Minkov; V. A. Larionova; O. E. Rut

doi:10.1117/12.514613

11 June 2003 Resonant broadening of two-dimensional state in semiconductors with inverted band structure

Alexander V. Germanenko, Grigori M. Minkov, V. A. Larionova, O. E. Rut

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514613
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Results of tunneling studies of MOS-structures based on Hg_1-xCd_xTe with an inverted band structure are reported. It has been found that the 2D states have revealed themselves at negative energies, when they are in resonance with the heavy hole valence band of bulk material. To interpret the experimental data the energy spectrum and broadening of the 2D states in a surface quantum well has been theoretically investigated in the framework of the Kane model, the finite value of the heavy hole effective mass has been taken into account.

Citation Download Citation

Alexander V. Germanenko, Grigori M. Minkov, V. A. Larionova, and O. E. Rut "Resonant broadening of two-dimensional state in semiconductors with inverted band structure", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514613

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