Optical properties of thin layers and conditions of the reactive sputtering for passivation of SQWSCH lasers

B. Stanczyk; A. Jagoda; Lech Dobrzanski; Andrzej Malag; Sylwia Wrobel; A. E. Kowalczyk

doi:10.1117/12.498251

8 July 2003 Optical properties of thin layers and conditions of the reactive sputtering for passivation of SQWSCH lasers

B. Stanczyk, A. Jagoda, Lech Dobrzanski, Andrzej Malag, Sylwia Wrobel, A. E. Kowalczyk

Author Affiliations +

Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498251
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic

Abstract

This paper presents method for facets passivation of high power lasers GaAl As using thin films of AIN and GaN formed by reactive sputtering at low temperature. GaN has been chosen due to its exceptional stability at high temperatures and resistance against attack. GaN is insoluble in acids. Layers of GaN protect AIN coating against influence of chemical and physical factors. We report some problems concerning technology of GaN thin films deposition using RF Sputtering from Ga target in Ar-N₂ gas mixtures. Observation of N⁺ peaks in plasma spectrum provides information on optimal conditions for synthesis of GaN. The quality of GaN layers was examined by X-ray Diffraction (XRD), SIMS method, optical absorption, measurement of refractive index and density. Lasers diodes with coated mirrors of AIN-GaN exhibit good stability during CW life-test.

Citation Download Citation

B. Stanczyk, A. Jagoda, Lech Dobrzanski, Andrzej Malag, Sylwia Wrobel, and A. E. Kowalczyk "Optical properties of thin layers and conditions of the reactive sputtering for passivation of SQWSCH lasers", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); https://doi.org/10.1117/12.498251

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