Paper
9 May 2003 Magnetoresistance and electrical noise in silver chalcogenide Ag2Te
Lai Jiang, Edmund R. Nowak
Author Affiliations +
Proceedings Volume 5112, Noise as a Tool for Studying Materials; (2003) https://doi.org/10.1117/12.496919
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Abstract
The relatively large and linear magnetoresistance found in nonstoichiometric silver chalcogenides makes them attractive candidates for studying the mechanisms of linear magnetoresistance and for field sensing applications. After a brief review of the magnetoresistive properties of these materials, we report on the intrinsic electrical noise in bulk, polycrystalline Ag2+δTe. Low-frequency noise is due to resistance fluctuations having a 1/f-like power spectrum. The temperature dependence of the noise magnitude and its spectral slope indicate thermally activated kinetics which we attribute to some form of charge trapping-detrapping process occurring in or near the intergranular regions. The effective magnetic field noise in Ag2+δTe is also compared to other materials systems used in field sensing applications.
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Lai Jiang and Edmund R. Nowak "Magnetoresistance and electrical noise in silver chalcogenide Ag2Te", Proc. SPIE 5112, Noise as a Tool for Studying Materials, (9 May 2003); https://doi.org/10.1117/12.496919
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KEYWORDS
Silver

Magnetism

Resistance

Semiconductors

Tellurium

Chalcogenides

Magnetic semiconductors

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