Accurate modeling of noise parameters in subquarter-micrometer gate FETs using physical simulators

Ali Abou-Elnour

doi:10.1117/12.497029

12 May 2003 Accurate modeling of noise parameters in subquarter-micrometer gate FETs using physical simulators

Ali Abou-Elnour

Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.497029
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

Linear, noise-generating systems in electronics are usually described by mathematical techniques which were originally designed for linear, time-invariant systems, e.g. output noise spectra are computed by application of the Fourier-transform to the autocorrelation function of the output signal. Recently, it was pointed out that this description might be incomplete, since the parameters of noise-generating systems fluctuate, i.e. they vary with time. Therefore, rather than using the theory of time-invariant systems, the theory of linear time-variant systems should be applied. This theory will be adapted to electronic circuits which are fed by noise, and which have inner niose soruces. It will be applied to simple electronic circuits like a simple equivalent circuit of an integrate ohmic resistor, in order to show the effect of the time-variance of parameters to the noise spectrum.

Citation Download Citation

Ali Abou-Elnour "Accurate modeling of noise parameters in subquarter-micrometer gate FETs using physical simulators", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.497029

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