Paper
25 March 2004 Reliability and intrinsic response of directly modulated MQW BH lasers
John G. Simmons, Ricardas Sobiestianskas, Robert Mallard, Gregory Letal
Author Affiliations +
Proceedings Volume 5277, Photonics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.530606
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia
Abstract
Light-current, relative intensity noise and spectral characteristics of a group of gain-guided InGaAsP/InP MQW buried heterostructure laser diodes have been investigated under accelerated aging conditions. The operating current, Iop, at constant output optical power increases logarithmically with time in stable devices, which indicates that the life expectancy of the lasers exceeds 2x105 hours or greater than 20 years. The emitted light wavelength at constant output power shifts by 2-2.5Å during 3000 hours of overstressing, mainly due to the increase in Iop. High-frequency RF signal-induced transient chirp for relative stable LDs at constant output power shows very little change with time.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John G. Simmons, Ricardas Sobiestianskas, Robert Mallard, and Gregory Letal "Reliability and intrinsic response of directly modulated MQW BH lasers", Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); https://doi.org/10.1117/12.530606
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KEYWORDS
Semiconductor lasers

Modulation

Reliability

Interfaces

Refractive index

Heterojunctions

Laser cutting

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