Paper
24 January 2004 Electrostatic micromirror fabricated using CMP and anodic bonding
Kunnyun Kim, Wonseok Choi, Kwangbum Park, Joon-Shik Park, Hyo-Derk Park, Hoon Heo
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Abstract
In this paper we present a micromirror fabrication technique without using silicon-on-insulator (SOI) wafers. Torsional electrostatic micromirrors have been fabricated using a combination of chemical mechanical polishing (CMP) process and anodic bonding. The size of fabricated silicon mirror plate was 610×400 μm2 and 20 μm thick. The steering electrodes have been fabricated in the dry etched trench on the glass wafer by electroplating process and CMP processing without damage of electrodes during anodic bonding process. The surface roughness of polished silicon micromirror(Ra) was 3.19nm. The single crystal silicon mirrors are electrostatically actuated with parallel bottom electrodes placed 8 μm below the mirror plate, and they could be stably operated in a ±1.1°. The pull-in voltage has been measured as 520 V. The resonant frequency of the fabricated torsion mirror was 47.3 kHz.
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Kunnyun Kim, Wonseok Choi, Kwangbum Park, Joon-Shik Park, Hyo-Derk Park, and Hoon Heo "Electrostatic micromirror fabricated using CMP and anodic bonding", Proc. SPIE 5346, MOEMS and Miniaturized Systems IV, (24 January 2004); https://doi.org/10.1117/12.524676
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KEYWORDS
Micromirrors

Mirrors

Semiconducting wafers

Electrodes

Silicon

Chemical mechanical planarization

Glasses

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