Induced density changes in 193-nm excimer-laser-damaged silica glass: a kinetic model

Douglas C. Allan; Roger J. Araujo; Charlene M. Smith; Nicholas F. Borrelli

doi:10.1117/12.533259

28 May 2004 Induced density changes in 193-nm excimer-laser-damaged silica glass: a kinetic model

Douglas C. Allan, Roger J. Araujo, Charlene M. Smith, Nicholas F. Borrelli

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.533259
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Silica glass exposed to pulsed UV excimer laser irradiation undergoes optical changes that can include either an optical path increase or a decrease. During a given exposure the sign of the induced optical path change can reverse as a function of pulse count. The reduced optical path and sign reversal are only observed in H₂-containing glasses, and at high exposure fluence only optical path increase is observed. In past work we proposed an induced density change model invoking a dynamic equilibrium density to explain the high fluence experiments. Here we present a model that extends the density model to the low fluence regime by allowing the equilibrium density to be a function of the time-dependent break-up of the silica network during exposure. The network break-up is tracked by calculation of the induced SiH concentration in the glass. The agreement of optical path change obtained from experimental data with that deduced from the kinetic approach covers a wide range of exposure fluence and molecular hydrogen concentration. Using the model one can predict the change in optical path that arises from the excimer laser exposure.

Citation Download Citation

Douglas C. Allan, Roger J. Araujo, Charlene M. Smith, and Nicholas F. Borrelli "Induced density changes in 193-nm excimer-laser-damaged silica glass: a kinetic model", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.533259

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