Paper
23 July 1985 Reticle Sizing For Optimized CD Control
Terry V. Nordstrom
Author Affiliations +
Abstract
The effect of reticle sizing has been characterized for a single layer resist process employing a hotplate postexposure bake. Results are presented which show optimum CD control is obtained for feature sizing .25 to .3 microns less than the reticle size for clear field reticles. Process margins relative to exposure dose, topography and focus are presented.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Terry V. Nordstrom "Reticle Sizing For Optimized CD Control", Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); https://doi.org/10.1117/12.947747
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KEYWORDS
Critical dimension metrology

Reticles

Semiconducting wafers

Photoresist processing

Process control

Metals

Photoresist materials

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