Paper
29 July 2004 Differential laterally movable gate FETs (LMGFETs) as a position sensor
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Abstract
A new position sensor based on laterally movable gate FET (LMGFET) sensing element has been designed and fabricated. The position sensor is designed to operate in a differential mode, which increases device sensitivity and performance. The moving proof mass is supported on each end by a folded beam which is also employed as a spring to restrain motion. The simulated value of the folded beam spring constant designed in this work is 44.8 N/m. The LMGFET microstructure is fabricated by a four-mask LIGA-like post-IC process compatible with standard CMOS fabrication technology. p+ region is ion-implanted under the moving structure as a ground plane and also to decrease leakage currents. Plasma ashing is employed to avoid stiction. The design of the sensor along with fabrication steps is described. Preliminary results on the electrical behavior of the fabricated LMGFET are given.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
In-Hyouk Song and Pratul K. Ajmera "Differential laterally movable gate FETs (LMGFETs) as a position sensor", Proc. SPIE 5389, Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology, (29 July 2004); https://doi.org/10.1117/12.539782
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Cited by 1 scholarly publication.
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KEYWORDS
Position sensors

Field effect transistors

Oxides

Microelectromechanical systems

Sensors

Nickel

Electroplating

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